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  4. Processing of ultrathin 300 mm wafers with carrierless technology
 
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2011
Conference Paper
Title

Processing of ultrathin 300 mm wafers with carrierless technology

Abstract
We present a "carrierless" design for the manufacturing of ultrathin Silicon wafers, which are used in e.g. TSV (Through Silicon Via) and power chip applications. A carrierless wafer is a wafer which has a thinned inner portion, usually thinner than 150 m, and a rim portion, which is stabilizing the wafer, so that the whole wafer can be handled without any additional support. In more detail, progress on 300 mm carrierless wafers and its compatibility with standard applications like RDL (Redistribution Layer) and bumping will be discussed.
Author(s)
Spiller, S.
Molina, F.
Wolf, J.M.
Grafe, J.
Schenke, A.
Toennies, D.
Hennemeyer, M.
Tabuchi, T.
Auer, H.
Mainwork
IEEE 61st Electronic Components and Technology Conference, ECTC 2011  
Conference
Electronic Components and Technology Conference (ECTC) 2011  
DOI
10.1109/ECTC.2011.5898629
Language
English
Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM  
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