InGaAs-based large area photoconductive emitters for 1.55 mum excitation

We present a scalable large-area terahertz (THz) emitter designed for excitation with 1.55 mum pump radiation. It is based on an InGaAs heterostructure combined with a microstructured electrode pattern. Electric fields of more than 2.5 V/cm in the THz focus are reached, the spectrum of the pulses extends up to 3 THz.