• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. PD-SOI MOSFETs: Interface effect on point defects and doping profiles
 
  • Details
  • Full
Options
2009
Conference Paper
Title

PD-SOI MOSFETs: Interface effect on point defects and doping profiles

Other Title
PD-SOI MOSFETs: Effekte der Grenzschicht auf Punktdefekte und Dotieratomprofile
Abstract
In this work, the influence of the Silicon/Buried Oxide interface (Si/BOX) on the electrical characteristics of Silicon-On-Insulator (SOI) MOSFETs is investigated by means of numerical simulations. Considering the State-of-Art dopant diffusion models and the recombining effect of Si/BOX interface on point defect, process simulations were performed to investigate the two-dimensional diffusion behaviour of the dopant impurities. The impact of the Si/BOX is investigated by analyzing the standard electrical characteristics of CMOS devices. Finally, a new electrical characterization methodology is detailed to better analyze dopants lateral diffusion profiles.
Author(s)
Bazizi, E.M.
Pakfar, A.
Fazzini, P.F.
Cristiano, F.
Tavernier, C.
Claverie, A.
Burenkov, A.  
Pichler, P.  orcid-logo
Mainwork
IEEE International SOI Conference 2009  
Conference
International SOI Conference 2009  
DOI
10.1109/SOI.2009.5318743
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • SOI

  • point defects

  • process simulation

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024