PD-SOI MOSFETs: Interface effect on point defects and doping profiles
Alternative
PD-SOI MOSFETs: Effekte der Grenzschicht auf Punktdefekte und Dotieratomprofile
Abstract
In this work, the influence of the Silicon/Buried Oxide interface (Si/BOX) on the electrical characteristics of Silicon-On-Insulator (SOI) MOSFETs is investigated by means of numerical simulations. Considering the State-of-Art dopant diffusion models and the recombining effect of Si/BOX interface on point defect, process simulations were performed to investigate the two-dimensional diffusion behaviour of the dopant impurities. The impact of the Si/BOX is investigated by analyzing the standard electrical characteristics of CMOS devices. Finally, a new electrical characterization methodology is detailed to better analyze dopants lateral diffusion profiles.
