Continuous-wave room-temperature operation of a 2.8 µm GaSb-based semiconductor disk laser

We demonstrate an optically pumped semiconductor disk laser based on the (AlGaIn)(AsSb) material system, which operates at an emission wavelength of 2:8 µm. Up to 120 mW of output power were obtained in cw operation and more than 500 mW in pulsed mode. The performance of the present laser is discussed in comparison to shorter-wavelength semiconductor disk lasers based on the same materials system.