Calibrated numerical model of a GaInP-GaAs dual-junction solar cell

In this letter a calibrated numerical model of a III-V dualjunction solar cell including tunnel diode and Bragg reflector is presented. The quantum efficiencies of the subcells are computed by using the principle of current-limitation in monolithic multi-junction solar cells. A special procedure with bias-illumination and bias-voltage was implemented. Numerical simulations are used to study the influence of the top cell thickness on the cells' quantum efficiency and on the current-matching condition.