The influence of post-exposure bake on linewidth control for the resist system RAY-PN-AZPN 100- in X-ray mask fabrication

Statistically designed experiments for optimization in processing the high sensitive negative tone Hoechst resist RAY-PN (AZ PN 100) were used to establish robust processes for two different applications of the resist: (1) pattern replication on a wafer and (2) during the mask copy process under 40-mbar He environment via X - ray lithography . Minimization of linewidth change with respect to a 1:1 pattern transfer was achieved through manipulation of the following variables: exposure dose, post-exposure bake (PEB) time and temperature, and development time. A two-stage sequential strategy was employed. After specifying the response and the primary variables, the first stage of the sequential approach was based on a full factorial design. In the second stage, the influence of PEB parameters for wafers as well as for X-ray mask blanks were studied using a central composite design. Finally, the response surfaces for the pattern replication on X-ray mask blanks are demonstrated and the opt imal process parameter set for a linewidth control within 50 nm for 0.5- to 3.0- mu m feature size values are given.