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  4. Ferromagnetism in partially spin-polarized GaInAs quantum wells
 
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2005
Conference Paper
Title

Ferromagnetism in partially spin-polarized GaInAs quantum wells

Abstract
We performed measurements of the Shubnikov-de Haas effect (SdH) and of the Quantum-Hall effect (QHE) at GaInAs quantum wells confined by AlInAs barriers. At odd filling factors (1 and 3), the two-dimensional electron system (2DES) of the quantum well is partially spin-polarized, leading to an enhanced effective Landé factor g*. In this case, asymmetric and hysteretic SdH-oscillations were predicted. At filling factor 1 (higher spin polarization) the asymmetry could be confirmed experimentally. At filling factor 3, the predicted asymmetry could be observed at a sample of higher electron density in tilted magnetic fields above 12 T. A hysteresis was not resolvable due to a reduced spin polarization.
Author(s)
Vogt, F.
Nachtwei, G.
Hein, G.
Künzel, H.
Mainwork
Physics of Semiconductors 2004. Vol.B  
Conference
International Conference on the Physics of Semiconductors (ICPS) 2004  
DOI
10.1063/1.1994647
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
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