Diffusion barrier stability against Cu diffusion under the influence of heavy Cu wire bonding

Heavy Cu wire-bonding is one of the key elements for a future increase of the high-temperature reliability of power modules. Si power devices with thick Cu metallizations of 10 mm and above get in the focus of the semiconductor industry as enabling technology for heavy Cu wire-bonding. In this context, the stability of Ti-N and Ta-N diffusion barriers against Cu diffusion and the influence of the bonding process on the metallization integrity on Si diodes is discussed.