An integrated source/mask/DSA optimization approach
The introduction of DSA for lithography is still obstructed by a number of technical issues including the lack of a comprehensive computational platform. This work presents a direct source/mask/DSA optimization (SMDSAO) method, which incorporates standard lithographic metrics and figures of merit such as the maximization of process windows. The procedure is demonstrated for a contact doubling example, assuming grapho-epitaxy-DSA. To retain a feasible runtime, a geometry-based Interface Hamiltonian DSA model is employed. The feasibility of this approach is demonstrated through several results and their comparison with more rigorous DSA models.