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  4. An SOI MOSFET for circuit simulators considering nonlinear dynamic self-heating
 
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1994
Conference Paper
Titel

An SOI MOSFET for circuit simulators considering nonlinear dynamic self-heating

Abstract
Modeling of the self-heating effect in SOI MOSFET's recently led to static and small-signal models of this device. Nevertheless, large-signal models taking into account this effect are not available yet. We fill this gap by presenting a large-signal electrothermal model of the SOI MOSFET for the simulator SPICE. The whole model is formulated as a set of algebraical and partial differential equations which is converted automatically by the model translator MEXEL into SPICE3 netlist. The dynamics of the self-heating process will be shown by several simulations.
Author(s)
Bielefeld, J.
Pelz, G.
Abel, H.B.
Zimmer, G.
Hauptwerk
International SOI Conference '94. Proceedings
Konferenz
International SOI Conference 1994
Thumbnail Image
DOI
10.1109/SOI.1994.514203
Language
English
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Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS
Tags
  • circuit simulation

  • electric heat

  • metal-oxide-semicondu...

  • MOS-Transistor

  • Schaltungssimulation

  • Simulationsmodell

  • Strömungssensor

  • transistor model

  • Transistormodell

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