Stress biasing of thin film membranes

Ion implantation provides a practical way to compensate mechanical stress in silicon dioxide and nitride layers. Changes are due to reversible structural modifications in the bulk of the layers. Through controlling thnum(e mechanical stress in thin films by means of ion implantation and annealing, one can obtain good quality, large area membranes. The technique can also be used for healing cracks in masling nitride layers.