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  4. Nonlinear electronic transport and device performance of HEMTs
 
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2001
Journal Article
Titel

Nonlinear electronic transport and device performance of HEMTs

Alternative
Über nichtlinearen Elektronentransport und Leistungsvermögen von HEMTs
Abstract
We assess the impact of nonlinear electronic transport and, in particular, of real space transfer (RST) on device performance for advanced III/V high electron mobility transistors (HEMTs) using the device simulator MINIMOS-NT. In this context, we discuss dc and RF performance issues for pseudomorphic AlGaAs/InGaAs/GaAs HEMTs that are especially relevant for gate-lengths of about 150 nm. All results are compared to and found to be consistent with experimental data for devices processed in tow different foundries.
Author(s)
Quay, Rüdiger orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Hess, K.
Reuter, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Schlechtweg, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Grave, T.
Palankovski, V.
Selberherr, S.
Zeitschrift
IEEE transactions on electron devices
Thumbnail Image
DOI
10.1109/16.902718
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
  • electron emission

  • Elektronenemission

  • equivalent circuits

  • MODFET

  • semiconductor heteroj...

  • simulation

  • simulation software

  • thermic emission

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