• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Artikel
  4. Nonlinear electronic transport and device performance of HEMTs
 
  • Details
  • Full
Options
2001
Journal Article
Title

Nonlinear electronic transport and device performance of HEMTs

Other Title
Über nichtlinearen Elektronentransport und Leistungsvermögen von HEMTs
Abstract
We assess the impact of nonlinear electronic transport and, in particular, of real space transfer (RST) on device performance for advanced III/V high electron mobility transistors (HEMTs) using the device simulator MINIMOS-NT. In this context, we discuss dc and RF performance issues for pseudomorphic AlGaAs/InGaAs/GaAs HEMTs that are especially relevant for gate-lengths of about 150 nm. All results are compared to and found to be consistent with experimental data for devices processed in tow different foundries.
Author(s)
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Hess, K.
Reuter, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schlechtweg, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Grave, T.
Palankovski, V.
Selberherr, S.
Journal
IEEE transactions on electron devices  
DOI
10.1109/16.902718
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • electron emission

  • Elektronenemission

  • equivalent circuits

  • MODFET

  • semiconductor heterojunction

  • simulation

  • simulation software

  • thermic emission

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024