• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Artikel
  4. Room temperature PVD TiN to improve the ferroelectric properties of HZO films in the BEoL
 
  • Details
  • Full
Options
2021
Journal Article
Title

Room temperature PVD TiN to improve the ferroelectric properties of HZO films in the BEoL

Abstract
Zirconium-doped hafnium oxide (HZO) crystallizes at low temperatures and is thus ideal to implement ferroelectric (FE) functionalities into the back end of line (BEoL). Therefore, metal-ferroelectric-metal (MFM) capacitors are of great interest. Placed in the BEoL, they can be connected either to the drain- or the gate-contact of a standard logic device to realize different emerging FE-embedded non-volatile memory (eNVM) concepts. However, the low crystallization temperature increases also the risk for a premature crystallization of the HZO films during the growth of the top electrode (TE), in particular, if high-temperature processes like atomic layer deposition (ALD) or chemical vapor deposition (CVD) are used. Herein, the TE is deposited at room temperature via physical vapor deposition (PVD). The impact of different process gas flows on the FE properties of the HZO films is studied by X-ray diffraction and polarization versus electric field measurements.
Author(s)
Lehninger, D.
Mertens, K.
Gerlich, L.
Lederer, M.
Ali, T.
Seidel, K.
Journal
MRS advances  
Open Access
DOI
10.1557/s43580-021-00118-w
Additional full text version
Landing Page
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024