High-power, high-brightness GaInSb/AlGaAsSb quantum-well diode-lasers emitting at 1.9µm

In the last few years there has been an increasing demand for high-power diode lasers emitting in the infrared wavelength region around 2 mu. The (AIGaIn)(AsSb) material system is the most promissing candidate to cover this spectral range. High output powers exceeding 1 W in cw mode at room temperature based an broad-area (BA) lasers have been reported by different groups. In many applications such as material processing, laser surgery or pumping of solid-state lasers it is desirable to have light-sources which show simultaneously both high output powers and a good beam quality. Because of their poor beam quality BA lasers do not fulfill the latter requirement whereas tapered diode lasers do so.