Interdiffusion in Pb1-xEuxSe/PbSe multi-quantum-well structures

Pb1-xEuxSe/PbSe multi-quantum-well (MQW) structures were grown by molecular beam epitaxy and their crystalline perfection was determined by X-ray diffraction measurements. Annealing experiments were performed in order to determine the Eu interdiffusion coefficient D. An upper bound of D equal 4x10high-18cmhigh2/s at a substrate temperature of Tsubs equal 370 degree C was found from X-ray diffraction as well as from secondary ion mass spectroscopy (SIMS) measurements. This small interdiffusion coefficient offers excellent prospects for the growth of single and mulitquantumwell lasers in this material system.