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  4. Experimental comparison of four different CMOS pixel architectures used in indirect Time-of-Flight distance measurement sensors
 
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2011
Conference Paper
Title

Experimental comparison of four different CMOS pixel architectures used in indirect Time-of-Flight distance measurement sensors

Abstract
Four different pixel architectures to be used in CMOS based indirect time-of-flight (ToF) rangers were designed, fabricated and characterised. The measured results are presented here for their direct comparison. Sharing a very similar, yet case optimised readout circuitry in each case, three fabricated CMOS rangers were based respectively on a pinned photodiode (PPD), a photogate, and a newly developed CMOS intrinsic lateral drift-field photodiode (LDPD), having a 40µm pixel pitch in each case, and finally compared to the pixel configuration based on a CMOS standard n-well based photodiode (PD). In all four cases, ranging is based on pulsed laser illumination and indirect time-of-flight measurements.
Author(s)
Durini Romero, Daniel
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Spickermann, Andreas
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Fink, Johannes  
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Brockherde, Werner  
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Grabmaier, Anton  
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Hosticka, Bedrich J.
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Mainwork
International Image Sensor Workshop 2011. Online resource  
Conference
International Image Sensor Workshop (IISW) 2011  
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • CMOS Imaging

  • LDPD Pixel

  • große Pixelfläche

  • Transferzeit

  • hohe Geschwindigkeit

  • laterales Drift-Feld

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