1993
Conference Paper
Title

Ferroelectric thin films in the system PZT

Abstract
A new one step deposition process for smooth and crackfree films with a thickness equal or bigger than 1 mym has been developed in the system Pb(Zr1-x Tix)O3 (PZT). The films showed device-worthy dielectric and ferroelectric properties with typical values for the Pr, Ec and epsr of 14 myC/cm2, 7kV/mm and 950 respectively.
Author(s)
Merklein, S.
Sporn, D.
Schönecker, A.
Mainwork
Conference
Language
English
Keyword(s)