Terahertz monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication

For the next generation of sensors and communication systems operating at frequencies up to 600 GHz and above, the Fraunhofer IAF is developing a broad variety of millimeter-wave and terahertz monolithic integrated circuits (MMICs and TMICs) and modules. The monolithic integrated circuits are realized using the advanced metamorphic high electron mobility transistor (mHEMT) technology in the InGaAs/InAlAs material system on 4" GaAs substrates. The potential of this technology is demonstrated in this paper by two TMICs operating at 600 GHz: a high-gain amplifier and an active frequency multiplier-by-six.