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  4. Chemically amplified deep ultraviolet resist for positive tone ion exposure
 
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1997
Conference Paper
Title

Chemically amplified deep ultraviolet resist for positive tone ion exposure

Abstract
The positive tone deep ultraviolet resist UV II HS-0.6 (Shipley) has been evaluated for ion exposure in the ion projector at the Fraunhofer Institute in Berlin. The chemically amplified resist showed extremely high sensitivity of 1*1012 H+ ions/cm2 at an ion energy of 75 keV. The contrast number was 11. Smallest lines with 65 nm linewidth could be delineated in 140-nm-high resist. At higher resist thickness of 370 nm, lines down to 70 nm were stable showing aspect ratios of >4. The exposure latitude at 100 nm nominal linewidth was +or-10% dose variation for a +or-10% linewidth change.
Author(s)
Brünger, W.H.
Torkler, M.
Buchmann, L.-M.
Finkelstein, W.
Mainwork
41st International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication 1997. Papers  
Conference
International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication 1997  
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
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