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  4. Widely tunable GaSb-based external cavity diode laser emitting around 2.3 µm
 
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2006
Journal Article
Title

Widely tunable GaSb-based external cavity diode laser emitting around 2.3 µm

Other Title
GaSb-basierte 2.3 µm Diodenlaser im externen Resonator mit breitem Durchstimmbereich
Abstract
We report on a widely tunable external cavity GaSb-based diode laser (ECL) in Littrow-configuration. The low (44° full-width at half-maximum) fast axis beam divergence of the quantum-well diode laser employed allowed an efficient coupling to the external cavity, which resulted in a wide tuning range of 177 nm around the central emission wavelength of 2.30 µm. The maximum output power of the fiber coupled ECL system varied only moderately between 16.5 mW at 2.23 µm and 9 mW at the long-wavelength limit at 2.39 µm.
Author(s)
Geerlings, E.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Rattunde, Marcel  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schmitz, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kaufel, G.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Zappe, H.P.
Wagner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
IEEE Photonics Technology Letters  
DOI
10.1109/LPT.2006.881658
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • external cavity

  • fiber coupled

  • GaSb

  • infrared diode laser

  • tuning range

  • externer Resonator

  • Durchstimmbereich

  • Faser gekoppelt

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