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2012
Journal Article
Title
4-12- and 25-34-GHz cryogenic mHEMT MMIC low-noise amplifiers
Abstract
In this paper, monolithic microwave integrated circuit (MMIC) broadband low-noise amplifiers (LNAs) for cryogenic applications based on a 100-nm metamorphic high-electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide are reported. A three-stage LNA, operating in 4-12 GHz and cooled to 15 K exhibits an associated gain of 31.5 dB 1.8 dB and average noise temperature of 5.3 K dB with a low power dissipation of 8 mW. Additionally another three-stage LNA 25-34 GHz cooled to 15 K has demonstrated a flat gain of 24.2 dB 0.4 dB with 15.2 K dB , average noise temperature, with a very low power dissipation of 2.8 mW on chip. The mHEMT-based LNA MMICs have demonstrated excellent noise characteristics at cryogenic temperatures for their use in radio-astronomy applications.
Author(s)