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  4. InP-based DHBT technology for high-speed mixed signal and digital applications
 
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2009
Conference Paper
Title

InP-based DHBT technology for high-speed mixed signal and digital applications

Abstract
We report on an InP DHBT-based technology featuring current gains of ~ 90, breakdown voltages of > 4.5 V and cut-off frequency (fT) values of > 300 GHz. Using this technology, state-of-the-art mixed signal integrated circuits, including distributed amplifiers (DAs), multiplexers (MUX) / demultiplexers (DEMUX), and clock and data recovery (CDR) ICs suitable for 100+ Gbit/s applications have been demonstrated. The DA-MMICs achieved gains of ~ 21 dB, 3-dB bandwidths of ges 95 GHz (gain-bandwidth-products > 1 THz), as well as output voltages of up to 3 V at 100 Gbit/s. A monolithically integrated CDR/1:2 DEMUX IC has also successfully been tested at data rates of up to 107 Gbit/s.
Author(s)
Driad, Rachid  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Makon, R.E.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Hurm, V.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Benkhelifa, Fouad  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Lösch, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Rosenzweig, Josef  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schlechtweg, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
IPRM 2009, IEEE International Conference on Indium Phosphide & Related Materials. Proceedings  
Conference
International Conference on Indium Phosphide and Related Materials (IPRM) 2009  
DOI
10.1109/ICIPRM.2009.5012407
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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