1990
Journal Article
Title

Superior microwave performance of InGaAs JFETs grown by MBE

Abstract
The realisation of high performance InGaAs JFETs designed for InP based optoelectronic integration is reported. An optimised MBE process for the gate layer growth is presented. JFETs fabricated by using a self-aligning technique exhibit very high cut-off frequencies of fT=28 GHz and fMAX=38 GHz.
Author(s)
Trommer, D.
Umbach, A.
Passenburg, W.
Mekonnen, G.
Unterborsch, G.
Journal
DOI
Language
English
Keyword(s)