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  4. Q- and E-band amplifier MMICs for satellite communication
 
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2014
Conference Paper
Title

Q- and E-band amplifier MMICs for satellite communication

Abstract
This work discusses MMICs for the realization of spaceborn multi-Gigabit satellite communication systems. A broadband low-noise amplifier, based on a 50 nm GaAs mHEMT technology, has been developed for Q-band low-noise receivers. The amplifier shows a small-signal gain of 27.5 dB with a gain flatness of ± 1.2 dB and a noise figure below 2 dB over the entire targeted frequency range between 30 and 50 GHz. For the next generation of E-band transmitter modules, a GaN-based highpower amplifier with a small-signal gain above 15 dB between 70-75 GHz and a saturated output power exceeding 28 dBm at 74 GHz has been developed.
Author(s)
Schwantuschke, Dirk  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Aja, B.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Seelmann-Eggebert, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Leuther, Arnulf  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Brueckner, Peter  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schlechtweg, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mikulla, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kallfass, I.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ambacher, Oliver  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
International Microwave Symposium, IMS 2014  
Conference
International Microwave Symposium (IMS) 2014  
DOI
10.1109/MWSYM.2014.6848322
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • low-noise amplifier (LNA)

  • metamorphic high electron mobility transistor (mHEMT)

  • monolothic microwave integrated circuits (MMICs)

  • aluminium gallium nitride

  • high power amplifiers

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