Safety aspects of ion implantation.

Ion implantation has become the most important doping technique for semiconductor devices in recent years. Ion implanters have changed from complicated experimental equipment to computer-controlled, automated machines. Nonetheless, implanters are still dangerous unless they are designed and operated properly. The main hazards result from high voltages, x-rays, and from toxic chemicals necessary to produce the desired ions. In this paper, the hazards typical for implanters will be discussed. (AIS-B)