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  4. Exciton dephasing in quantum wells. Influence of spectral fluctuation processes
 
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1996
Conference Paper
Title

Exciton dephasing in quantum wells. Influence of spectral fluctuation processes

Other Title
Entmischen der Phasen von Exzitonen in Quantum Wells. Einfluß der spektralen Fluktuationsprozesse
Abstract
We perform spectrally resolved three-beam four-wave-mixing experiments in GaAs/AlGaAs quantum wells. The various resonances in these structures show very different decay parameters as a function of the delay times. A comparison with theory demonstrates that the relaxation of both polarization and population are governed by spectral fluctuations. The redistribution properties of the population are directly determined.
Author(s)
Löser, F.
Neuber, A.
Klatt, D.
Lyssenko, V.G.
Pantke, K.-H.
Leo, K.
Glutsch, S.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
23rd International Conference on the Physics of Semiconductors 1996. Vol. 1  
Conference
International Conference on the Physics of Semiconductors 1996  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • heterostructure

  • Heterostruktur

  • III-V Halbleiter

  • III-V semiconductors

  • time resolved measurement

  • zeitaufgelöste Messung

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