InP DHBT-based distributed amplifier for 100 Gbit/s modulator driver operation

A distributed amplifier for use as a modulator driver in next generation optical data communication systems has been manufactured using InP double-hetero bipolar transistor ( DHBT) technology with an emitter size of 0.7 x 1 mu m(2). The amplifier achieved a gain of 21 dB and a 3 dB bandwidth of 120 GHz, resulting in a gain-bandwidth product of 1.35 THz. Clearly open 100 Gbit/s 2(31)-1 non-return-to-zero pseudorandom bit sequence (NRZ PRBS) eye diagrams with an output voltage swing of 2.3 V have been measured.