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1991
Conference Paper
Title

SIMOX-devices for analog circuits

Abstract
Beside the classical advantages of SOI, this technology offers the unique opportunity to integrate monolithically devices with vertical current pathes like high power DMOS-FETs or sensors with lateral (CMOS)-devices. The performance of sensors can be increased if analog circuits like amplifiers and/or A/D-converter are also integrated on the same chip. This can easier be done if the devices are dielectrically isolated as it is in the SIMOX-technology. Some sensors are running at an elevated temperature range above 100xC, the resulting requirements for the analog circuits can only fullfilled with the SIMOX-technology. But to run analog circuits on SIMOX care has to be taken about the Kink-effect, the BJT-breakdown, the single-transistor latch and for some applications the noise of the devices. In this paper we'll report about the results of the different approaches to deal with the mentioned items.
Author(s)
Badenes, G.
Burbach, G.
Gassel, H.
Vogt, H.
Mainwork
International SOI Conference '91. Proceedings  
Conference
International SOI Conference 1991  
DOI
10.1109/SOI.1991.162910
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • analog circuit element

  • CMOS

  • SIMOX

  • SOI

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