2010
Conference Paper
Title

Detailed physical simulation of program disturb mechanisms in sub-50 nm NAND flash memory strings

Abstract
The hot electron induced mechanism disturbing the stored information in inhibited bit lines during the programming of nonvolatile memories with NAND architecture is studied in detail using a new dedicated advanced physical simulation scheme for the first time.
Author(s)
Nguyen, C.D.
Kuligk, A.
Vexler, M.I.
Klawitter, M.
Beyer, V.
Melde, T.
Czernohorsky, M.
Meinerzhagen, B.
Mainwork
Conference
DOI
Language
English