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  4. Pentacene homojunctions: Electron and hole transport properties and related photovoltaic responses
 
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2008
Journal Article
Title

Pentacene homojunctions: Electron and hole transport properties and related photovoltaic responses

Abstract
We report on organic p-i-n homojunctions composed of differently doped vacuum-deposited pentacene layers. We observe a remarkably high built-in voltage of 1.65 V. An analysis of the current-voltage characteristics under dark and illuminated conditions reveals that the open-circuit voltage is directly related to the built-in voltage and that the recombination process is influenced by the distinct charge transport properties of electrons and holes in the pentacene film. By a comparison with p-i-p and n-i-n single-carrier homojunctions, deep trap states located around 0.63 eV below the electron transport level are shown to influence the properties.
Author(s)
Harada, K.
Riede, M.
Leo, K.
Hild, O.R.
Elliott, C.M.
Journal
Physical Review. B  
DOI
10.1103/PhysRevB.77.195212
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
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