• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Artikel
  4. Experience with AlN substrate
 
  • Details
  • Full
Options
1989
Journal Article
Title

Experience with AlN substrate

Abstract
The similarity of its temperature expansion coefficient to that of silicon, as well as its high thermal conductivity, makes AlN a material suited for application in microelectronics. A comparison of the various AlN manufacturers shows above all differences in the choice of sintering aids and the type of sintering process. A comparison of a standard paste system (Du Pont) with a new special development (Shoei) demonstrates the need for adapting the pastes to AlN ceramics. Thin film technology is possible at a standard similar to that of Al2O3. (IFT)
Author(s)
Feil, M.
Journal
Hybrid Circuits  
Language
English
IFT  
Keyword(s)
  • AlN-Keramik

  • AlN-Oberfläche

  • Dickschichttechnik

  • Dünnfilmtechnik

  • Vergleich

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024