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Dislocation conversion and propagation during homoepitaxial growth of 4H-SiC
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2010
Conference Paper
Title
Dislocation conversion and propagation during homoepitaxial growth of 4H-SiC
Author(s)
Kallinger, B.
Thomas, B.
Polster, S.
Berwian, P.
Friedrich, J.
Mainwork
Silicon carbide and related materials 2009
Conference
International Conference on Silicon Carbide and Related Materials 2009
Open Access
DOI
10.4028/www.scientific.net/MSF.645-648.299
Additional link
Full text
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Keyword(s)
epitaxial growth
dislocation
x-ray topography
KOH etching
