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  4. WDM components on the basis of InGaAsP/InP directional couplers
 
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1990
Conference Paper
Title

WDM components on the basis of InGaAsP/InP directional couplers

Abstract
The paper describes the production of two wavelength-selective multiplexer/demultiplexer ( lambda -muldex) components intended to become parts of an integrated optical convertor for a bidirectional subscribers' access system. These are: a broadband muldex for 1.3 and 1.55 µm and a narrow-band duplexer for the 1.3 µm band. It discusses the general background to the development and the technology of the broad-band muldex, describes in some detail the steps in the production of the devices by a two-stage, self-aligning etching process, and indicates the characteristics.
Author(s)
Bornholdt, C.
Kappe, F.
Nolting, H.P.
Stenzel, R.
Venghaus, H.
Weinert, C.M.
Mainwork
Heterostruktur-Bauelemente  
Conference
Informationstechnische Gesellschaft (Fachtagung) 1990  
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • directional couplers

  • frequency division multiplexing

  • gallium arsenide

  • gallium compounds

  • iii-v semiconductors

  • indium compounds

  • integrated optics

  • multiplexing equipment

  • optical communication equipment

  • optical couplers

  • wavelength selective multiplexer/demultiplexer components

  • bidirectional subscriber access system

  • two-stage etching process

  • semiconductors

  • wdm components

  • integrated optical convertor

  • broadband muldex

  • narrow-band duplexer

  • self-aligning etching process

  • 1.3 micron

  • 1.55 micron

  • InGaAsP-InP directional couplers

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