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  4. Trench gate integration into planar technology for reduced on-resistance in LDMOS devices
 
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2010
Poster
Title

Trench gate integration into planar technology for reduced on-resistance in LDMOS devices

Title Supplement
Poster presented at Symposium on Power Semiconductor Devices & ICs 2010, Hiroshima, Japan
Author(s)
Erlbacher, T.  
Rattmann, G.  
Bauer, A.J.
Frey, L.
Conference
International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2010  
File(s)
Download (4.35 MB)
Rights
Use according to copyright law
DOI
10.24406/publica-fhg-368395
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • integrierte Schaltung

  • Trockenätzprozess

  • Leistungselektronik

  • smart power ICs

  • Leistungs-MOSFET

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