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  4. 40 GHz monolithically-integrated fully-balanced VCO using 0.3 mu m HEMTs
 
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1997
Journal Article
Title

40 GHz monolithically-integrated fully-balanced VCO using 0.3 mu m HEMTs

Other Title
40 GHz monolithisch integrierter voll balancierter VCO hergestellt mittels 0.3 Mikrometer HEMTs
Abstract
A monolithically-integrated, fully balanced VCO with a central frequency of about 40GHz has been designed and realised using capacitively-coupled HEMT-triples as active components, on-chip coplanar waveguides as inductive devices, and junction capacitances of HEMTs as varactors. The chip has a DC consumption of 200mW.
Author(s)
Wang, Z.-G.
Berroth, M.
Thiede, A.
Rieger-Motzer, M.
Jakobus, T.
Hülsmann, A.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Raynor, B.
Journal
Electronics Letters  
DOI
10.1049/el:19970290
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • electrical property

  • elektrische Eigenschaft

  • III-V heterostructure

  • III-V Heterostruktur

  • monolithic integration

  • monolithische Integration

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