Development and Process Optimization of a p-IBC Solar Cell with PECVD Deposited Passivated Contacts

In this research, we present the design and optimization of an interdigitated back contact (IBC) solar cell. The cell utilizes a cost-effective, commonly used substrate material, a Cz-Si Ga-doped wafer. The proposed processing techniques are all well-known from high-volume Passivated Emitter and Rear Cell (PERC) production, allowing for efficient utilization of existing production tools. The solar cell design features a front floating emitter and rear passivated contacts, with an in-situ doped a-Si layer deposited by plasma enhanced chemical vapor deposition (PECVD). Our process optimization efforts presented in this work have resulted in a current champion cell with a conversion efficiency of 22.94%.