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  4. Continuous Current Sensing GaN Half-Bridge ICs
 
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2026
Journal Article
Title

Continuous Current Sensing GaN Half-Bridge ICs

Abstract
This work presents two GaN-integrated approaches for continuous inductor current sensing in half-bridge power converter circuits. The first approach utilizes an integrated drain current mirror on the low-side and a source current mirror on the high-side, combined via a single transimpedance amplifier referenced to the switch node. The second method employs integrated shunt resistors on the low-side drain and high-side source, enabling continuous current sensing through analog summation. Both techniques are experimentally validated and shown to provide accurate, high-bandwidth current signals suitable for control and protection. Additionally, the paper offers a comparative review of state-of-the-art GaN current sensing technologies. Continuous current sensing in GaN half-bridges simplifies the interface and circuitry to external controllers, while enabling effective control and robust protection of power ICs and converters.
Author(s)
Mönch, Stefan  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Basler, Michael  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Haarer, Jörg
University of Stuttgart
Reiner, Richard  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
IEEE open journal of power electronics  
Open Access
File(s)
Download (3 MB)
Rights
CC BY 4.0: Creative Commons Attribution
DOI
10.1109/OJPEL.2026.3658403
10.24406/publica-8093
Additional link
Full text
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Half-bridges

  • current sensing

  • GaN ICs

  • power integrated circuits

  • sensors

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