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  4. Exploiting FeFET Switching Stochasticity for Low-Power Reconfigurable Physical Unclonable Function
 
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2021
Conference Paper
Title

Exploiting FeFET Switching Stochasticity for Low-Power Reconfigurable Physical Unclonable Function

Abstract
This paper investigates reconfigurable physical unclonable function (PUF) design by exploiting the polarization switching variation and stochasticity in ferroelectric field-effect-transistors (FeFETs). The proposed PUFs include 1-transistor/cell (1T/C) and 2T/C designs. The denser 1T/C PUF splits random '0' and '1' states using a tactically pre-defined reference. The 2T/C PUF needs no dedicated references and obtains unbiased random states by differentiating two FeFETs under a proposed sensing error cancellation scheme. Experimental measurements have shown the uniform randomness, uniqueness, repeatability and reconfigurability of the response. Further simulations using an experimentally calibrated multi-domain FeFET model show high energy efficiency and robustness on design parameters.
Author(s)
Guo, X.
BNRist/ICFC, Tsinghua University
Ma, X.
BNRist/ICFC, Tsinghua University
Müller, F.
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Olivo, R.
BNRist/ICFC, Tsinghua University
Wu, J.
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Ni, K.
Rochester Institute of Technology
Kämpfe, T.
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Liu, Y.
BNRist/ICFC, Tsinghua University
Yang, H.
BNRist/ICFC, Tsinghua University
Li, X.
BNRist/ICFC, Tsinghua University
Mainwork
IEEE 47th European Solid State Circuits Conference, ESSCIRC 2021  
Conference
European Solid State Circuits Conference (ESSCIRC) 2021  
DOI
10.1109/ESSCIRC53450.2021.9567880
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
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