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  4. Electrical detection of nuclear magnetic resonance in GaAs-Al(x)Ga(1-x)As heterostructures
 
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1988
Journal Article
Title

Electrical detection of nuclear magnetic resonance in GaAs-Al(x)Ga(1-x)As heterostructures

Other Title
Elektrischer Nachweis der magnetischen Kernresonanz in GaAs-Al(x)Ga(1-x)As Heterostrukturen
Abstract
The experimental investigation of the electron spin resonance in the two-dimensional electron gas of GaAs-AlxGa1-xAs heterostructures via the ESR-induced change of magnetoresistivity reveals hysteresis and long-persisting memory effects. We have been able to prove the nuclear origin of the observed effects by performing nuclear magnetic resonance and observing NMR in the magnetoresistivity of the heterostructures. (IAF)
Author(s)
Schneider, J.
Dobers, M.
Weimann, G.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ploog, K.
Klitzing, K. von
Journal
Physical review letters  
DOI
10.1103/PhysRevLett.61.1650
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Elektronenspinresonanz

  • Gallium-Aluminium-Arsenid

  • Heterostruktur

  • Kernspinresonanz

  • Overhauser-Effekt

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