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  4. A low insertion loss and low Vp InP IQ modulator for advanced modulation formats
 
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2014
Conference Paper
Title

A low insertion loss and low Vp InP IQ modulator for advanced modulation formats

Abstract
We demonstrate a high performance chip-on-carrier IQ modulator based on InP MQW technology. The device achieved a 3-dB bandwidth of 40 GHz, a Vp of 2.2 V and an insertion loss of <6.5 dB over the C-band.
Author(s)
Rouvalis, E.
Metzger, C.
Charpentier, A.
Ayling, T.
Schmid, S.
Gruner, M.
Hoffmann, D.
Hamacher, M.
Fiol, G.
Schell, M.
Mainwork
European Conference on Optical Communication, ECOC 2014. Vol.1  
Conference
European Conference on Optical Communication (ECOC) 2014  
DOI
10.1109/ECOC.2014.6963833
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
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