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  4. Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguides lasers suitable for monolithic integration
 
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1994
Conference Paper
Titel

Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguides lasers suitable for monolithic integration

Alternative
Direkte Modulation bis 33 GHz bei niedrigem Bias-Strom in GaAs-basierendem monolithisch integrierbaren MQW-Rippenwellenleiter-Lasern
Abstract
Modulation bandwidths of 24 GHz (Ibias=25 mA) and 33 GHz (Ibias=65 mA) are demonstrated for 3*100 mym2 In0.35 Ga0.65 As/GaAs multiple quantum well ridge-waveguide lasers with undoped and p-doped active regions, respectively. These performance enhancements have been achieved both by lowering the growth temperature of the high-Al-mole-fraction cladding layers and by utilizing short-cavity devices, fabricated with dry-etched facts using chemically-assisted ion-beam etching. Both the undoped and p-doped lasers also demonstrate modulation current efficiency factors exeeding 5 GHz/mA 1/2, the best reported results for any semiconductor laser.
Author(s)
Ralston, J.D.
Eisele, K.
Sah, R.E.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Larkins, E.C.
Weisser, S.
Fleissner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Bender, K.
Rosenzweig, Josef
Hauptwerk
14th IEEE International Semiconductor Laser Conference
Konferenz
International Semiconductor Laser Conference 1994
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DOI
10.1109/ISLC.1994.519338
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
  • InGaAs/GaAs

  • MBE

  • modulation bandwidth

  • Modulationsbandbreite

  • monolithic integration

  • monolithische Integration

  • pseudomorphe Struktur

  • pseudomorphic structure

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