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  4. 70 dB signal-to-noise ratio at 3 THz using locally doped InGaAs-based photoconductive detectors
 
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2017
Conference Paper
Titel

70 dB signal-to-noise ratio at 3 THz using locally doped InGaAs-based photoconductive detectors

Abstract
This article investigates photoconductive THz detectors based on low-temperature-grown InGaAs/InAlAs with a localized Be doping profile. With this approach we address the inherent trade-off between ultrafast carrier trapping and high mobility in photoconductors. The processed detector antennas show an excellent performance and feature a detection bandwidth of more than 6 THz and a signal-to-noise ratio of 70 dB at 3 THz.
Author(s)
Kohlhaas, R.B.
Nellen, S.
Liebermeister, L.
Globisch, B.
Schell, M.
Hauptwerk
42nd International Conference on Infrared, Millimeter, and Terahertz Waves 2017
Konferenz
International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) 2017
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DOI
10.1109/IRMMW-THz.2017.8067021
Language
English
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Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI
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