Electrical Characterization of Low Temperature PECVD Oxides for TSV Applications

In the present work we investigate the quality of low temperature PECVD and plasma treated TEOS-based TSV-liner films. Different designs of TSV Test structures with 10µm and 20µm width and a depth of 100µm have been fabricated. Two differently doped silicon substrates have been used ? highly p-doped and moderately doped. The results for break-through, resistivity and capacitance for the 20µm structures show a better performance compared to the 10µm structures. This is mainly due to increased liner thickness in the reduced aspect ratio case. Lower interface traps and oxide charge densities have been observed in the C-V measurements results for the 10µm structures.