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  4. Ultra flat P-N junctions formed by solid source laser doping
 
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1990
Journal Article
Title

Ultra flat P-N junctions formed by solid source laser doping

Abstract
A CO sub 2 high-power laser was used for laser-driven boron and phosphorus diffusion in solid phase from silicate glass layers into silicon. This technique allows the formation of shallow (< 0.1mym) and flat profile junctions with a concentration of about 10 high 19 cm high -3. SIMS, SEM and spreading resistance methods were used for sample characterization.
Author(s)
Stock, G.
Bollmann, D.
Buchner, R.
Neumayer, G.
Haberger, K.
Journal
Applied surface science  
Conference
European Materials Research Society (Spring Meeting) 1990  
DOI
10.1016/0169-4332(90)90168-Y
Language
English
IFT  
Keyword(s)
  • diffusion

  • doping

  • Dotierung

  • flach

  • flat

  • Halbleiter

  • laser

  • Oberfläche

  • p-n junction

  • p-n Übergang

  • pn-junction

  • pn-Übergang

  • semiconductor

  • shallow

  • silicate glass

  • silicon

  • Silizium

  • surface

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