Ultra flat P-N junctions formed by solid source laser doping

A CO sub 2 high-power laser was used for laser-driven boron and phosphorus diffusion in solid phase from silicate glass layers into silicon. This technique allows the formation of shallow (< 0.1mym) and flat profile junctions with a concentration of about 10 high 19 cm high -3. SIMS, SEM and spreading resistance methods were used for sample characterization.