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  4. High Power High bandwidth GaN MMICs and hybrid amplifiers: Design and characterization
 
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2005
Conference Paper
Title

High Power High bandwidth GaN MMICs and hybrid amplifiers: Design and characterization

Abstract
Broadband microstrip and coplanar MMIC amplifiers featuring beyond 10W for X-band radar applications are realized in a AlGaN/GaN HEMT technology on 2" s.i. SiC substrate. Single-stage and dual-stage demonstrators with flat gain from 1 GHz to 2.7 GHz and up to 40 W peak power in hybrid microstrip technology for basestation applications are presented. The performance illustrates the potential of this technology with very high bandwidth and superior power density in comparison to GaAs.
Author(s)
Raay, Friedbert van  
Quay, Rüdiger  orcid-logo
Kiefer, R.
Walcher, H.
Kappeler, Otmar
Seelmann-Eggebert, M.
Muller, Stefan
Schlechtweg, M.
Weimann, G.
Mainwork
13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. Conference proceedings  
Conference
European Gallium Arsenide and Other Compound Semiconductors Application Symposium (GAAS) 2005  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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