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  4. MBE regrowth on planar and patterned In(GaAs)P layers for monolithic integration
 
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1996
Conference Paper
Titel

MBE regrowth on planar and patterned In(GaAs)P layers for monolithic integration

Abstract
MBE regrowth of InP based device layers on planar and patterned In(GaAs)P structures was studied in the framework of monolithic integration of an optoelectronic receiver comprising HEMTs and a waveguide integrated photodiode. Appropriate surface cleaning prior to regrowth proved to be essential for obtaining low contamination levels and surfaces of high morphological quality. Different wet chemical etchants and surface oxidation using UV/ozone exposure have been compared. In this context MBE regrowth over etched steps was also addressed.
Author(s)
Passenberg, W.
Schlaak, W.
Umbach, A.
Hauptwerk
Compound Semiconductors 1996. Proceedings of the Twenty-Third International Symposium on Compound Semiconductors
Konferenz
International Symposium on Compound Semiconductors 1996
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Language
English
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Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI
Tags
  • etching

  • gallium arsenide

  • HEMT integrated circu...

  • iii-v semiconductors

  • indium compounds

  • integrated optoelectr...

  • molecular beam epitax...

  • oxidation

  • photodiodes

  • semiconductor growth

  • surface cleaning

  • inGaAs mbe regrowth

  • patterned in(GaAs)p l...

  • planar in(GaAs)p laye...

  • monolithic integratio...

  • InP based device laye...

  • optoelectronic receiv...

  • HEMT

  • waveguide integrated ...

  • low contamination lev...

  • high surface morpholo...

  • wet chemical etchants...

  • surface oxidation

  • uv/ozone exposure

  • etched steps

  • molecular beam epitax...

  • inp

  • inGaAsp

  • inGaAs

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