Large signal modeling of AlGaN/GaN HEMTs with Psat > 4 W/mm at 30 GHz suitable for broadband power applications

Large signal modeling and investigations of an AlGaN/GaN HEMT process on SiC with lg = 150 nm are performed with respect to broadband amplifiers up to 30 GHz. Output power values of 3.4 W or 4.25 W/mm at 18 GHz and Pout=1.6 W equivalent to 4 W/mm at 30 GHz are measured. The device modeling shows good agreement of the measured and modeled power sweeps at 10 GHz and 30 GHz. The large signal simulations show the suitability of AlGaN/GaN HEMTs for multi-band amplifiers in the K-band.