Application of test structures for monitoring of high frequency characteristics of Silicon up to 60GHz

This paper summarizes test structures for continuous determination of electrical properties of material. On the basis of onchip technologie a silicon wafer with a resistivity of 500Ohm*cm is characterized. A method for determination of material properties in a frequency range of 4 GHz to at least 60 GHz is presented. Fundamental importance is attached to the relative permittivity and the dissipation factor. High frequency measurements are compared to simulation results. Finally, the extracted material parameters are presented and discussed.