W-band power amplifier MMIC with 400 mW output power in 0.1 µm AlGaN/GaN technology

The 0.1 µm AlGaN/GaN technology and design of two W-band power amplifiers in this technology are described. The dual-stage amplifier reaches an output power of 400 mW at 90 GHz at an operation bias of 20 V. Two designs with different driver to final stage gate width ratio are discussed. More than 10 dB of power gain is reached for a compression level of around 2 dB per stage.