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2008
Journal Article
Title
Phase stabilization and phonon properties of single crystalline rhombohedral indium oxide
Other Title
Stabilisierung der Phase und Eigenschaften der Phononen von rhombohedrischen Indiumoxid
Abstract
We report on the phase stabilization of rhombohedral (rh-) In2O3 films on sapphire substrate deposited by metal organic chemical vapor deposition. With the help of a high-temperature nucleation layer and evolutionary structural selection of rhombohedral phase during the growth process, stable epitaxial growth of single crystalline rh-In2O3 is achieved. The mechanism of phase selective epitaxial growth is studied by means of high-resolution X-ray diffraction and transmission electron microscopy measurements. Furthermore, Raman spectroscopy measurements are carried out to investigate the phonon properties of rh-In2O3, Raman-active phonon modes of rh-In2O3 are first identified.
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